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| 2SK1303 Silicon N-Channel MOS FET Application TO-3P High speed power switching Features * * * * Low on-resistance High speed switching Low drive current 4 V gate drive device - Can be driven from 5 V source * Suitable for motor drive, DC-DC converter, power switch and solenoid drive 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 100 20 30 120 30 100 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK1303 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) Min 100 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 80 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 15 A, VGS = 10 V * -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 1.0 -- -- Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr 13 -- -- -- -- -- -- -- -- -- -- -- 0.05 0.06 22 1750 710 180 15 120 390 195 1.3 10 250 2.0 0.06 0.09 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 30 A, VGS = 0 IF = 30 A, VGS = 0, diF/dt = 50 A/s ID = 15 A, VGS = 10 V, RL = 2 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------- --------------------- ID = 15 A, VGS = 4 V * ID = 15 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 360 -- ns -------------------------------------------------------------------------------------- 2SK1303 Power vs. Temperature Derating 120 Channel Dissipation Pch (W) 500 200 Drain Current ID (A) 100 50 20 10 5 2 Maximum Safe Operation Area 10 80 10 D 0 s 40 1.0 is Limited by RDS (on) 0.5 0 50 100 Case Temperature TC (C) 150 1 P C W= O pe 10 ra m tio s n (1 (T S C = ho 25 t) Operation in this Area C) s 3 30 10 100 300 1,000 Drain to Source Voltage VDS (V) 1 s m Ta = 25C Typical Output Characteristics 50 10 V 5V 7V 40 Drain Current ID (A) 3.5 V 30 50 4V Pulse Test Drain Current ID (A) 40 Typical Transfer Characteristics VDS = 10 V Pulse Test 30 20 3V 20 75C 10 TC = 25C -25C 10 VGS = 2.5 V 0 4 12 16 8 Drain to Source Voltage VDS (V) 20 0 1 2 3 4 Gate to Source Voltage VGS (V) 5 2SK1303 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 5 Pulse Test Static Drain to Source on State Resistance RDS (on) () 0.5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.2 VGS = 4 V 0.1 0.05 10 V 4 3 ID = 50 A 2 20 A 10 A 0.02 0.01 0.005 2 5 50 100 200 10 20 Drain Current ID (A) 1 0 4 2 6 8 Gate to Source Voltage VGS (V) 10 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () Forward Transfer Admittance yfs (S) 0.20 Pulse Test 50 Forward Transfer Admittance vs. Drain Current 0.16 20 10 5 -25C TC = 25C 75C 0.12 ID = 20 A 10 A 50 A 0.08 VGS = 4 V VGS = 10 V 20 A 10 A 2 1.0 VGS = 10 V Pulse Test 0.04 0 -40 0 80 120 40 Case Temperature TC (C) 160 0.5 1.0 5 10 2 20 Drain Current ID (A) 50 2SK1303 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 10,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) Ciss 1,000 Coss 2,000 1,000 500 Crss 100 200 100 50 0.5 20 2 1.0 10 5 Reverse Drain Current IDR (A) 50 10 0 10 30 40 20 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 100 Drain to Source Voltage VDS (V) VDD = 25 V 50 V 80 V 60 VDD = 80 V VGS 12 20 Gate to Source Voltage VGS (V) 1,000 500 Switching Time t (ns) Switching Characteristics td (off) 80 VDS 16 200 100 50 tr tf 40 8 20 50 V 25 V ID = 30 A 4 . VGS = 10 V, VDD = 30 V . PW = 2 s, duty < 1% td (on) 20 10 0.5 0 0 20 40 60 80 Gate Charge Qg (nc) 100 1.0 5 20 10 2 Drain Current ID (A) 50 2SK1303 Reverse Drain Current vs. Source to Drain Voltage 50 Reverse Drain Current IDR (A) Pulse Test 40 30 20 10 V 5V VGS = 0, -10 V 10 0 0.4 1.2 1.6 0.8 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 TC = 25C 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 0.01 h ul ot P ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM se 0.03 1S 0.01 10 T 100 1m 10 m Pulse Width PW (s) 100 m PW 1 D = PW T 10 2SK1303 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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